SI4804DY-T1 |
RFQ for SI4804DY-T1 |
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| Product | Manufacturers | Pack | D/C |
| SI4804DY-T1 | - | - | 2002 |
| Parameter | Symbol | 10 secs | Steady State | Unit | |||
| Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | ±20 | |||||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 7.5 | 5.7 | A | ||
| TA = 70 | 6.0 | 4.6 | |||||
| Pulsed Drain Current | IDM | 20 | |||||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 0.9 | A | |||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.1 | W | ||
| TA = 70 | 1.3 | 0.7 | |||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||||